Одиночные диоды
| Фото | № детали производителя | Наличие | Количество | Технический паспорт | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYQ60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors |
569 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
BYV60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors |
468 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 79 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC2D10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
995 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
WNSC6D166506QDIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors |
2,976 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
BYC30W-600PT2QDIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors |
1,787 |
|
|
- | TO-247-2 | Bulk | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 34 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
BYC30W-1200PQDIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors |
386 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
WNSC2D10650TJDIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors |
890 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
WNSC2D10650WQDIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors |
517 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
BYC75W-600PT2QDIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors |
508 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 2.75 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC6D16650CW6QDIODE SIL CARB 650V 16A TO247-3 WeEn Semiconductors |
3,000 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C |
