Одиночные диоды
| Фото | № детали производителя | Наличие | Количество | Технический паспорт | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR103BULKDIODE GEN PURP 200V 1A DO41 EIC SEMICONDUCTOR INC. |
38,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
FR106BULKDIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC. |
37,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
BA159BULKDIODE GEN PURP 1KV 1A DO41 EIC SEMICONDUCTOR INC. |
17,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
SF13-BULKDIODE GEN PURP 150V 1A DO41 EIC SEMICONDUCTOR INC. |
15,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
BA158BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
13,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
FR105BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
10,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
HER101BULKDIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC. |
7,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
FR303BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 200 V | 60pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
BYD13MBULKDIODE AVALANCHE 1KV 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Avalanche | 1000 V | 1.4A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | - | - | - | Through Hole | DO-41 | 175°C |
|
BYD13GBULKDIODE AVALANCHE 400V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Avalanche | 400 V | 1.4A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | - | - | - | Through Hole | DO-41 | 175°C |
